1N645 DATASHEET PDF

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. Excludes light emitting diode and semiconductor device, photo. For items containing material such as selenium and copper oxide, see recifier, metallic. Send us a request for quote using the form below. Our team will contact you with an up to date pricing and availability quote ASAP. N - Indicates there is no data in the humors and the nsn is in a fsc not generally suspected of containing hazardous materials.

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The diode model is based on characterization of individual devices as described in a product data sheet and manufacturing process characteristics not listed. Some information has been extracted from a 1N data sheet in Figure below. Data sheet 1N excerpt, after [DI4]. Example diode element names include: d1, d2, dtest, da, db, d Two node numbers specify the connection of the anode and cathode, respectively, to other components.

None are used in Example below. Example2 has some parameters defined. For a list of diode parameters, see Table below. Table below lists the model parameters for some selected diodes. A third strategy, not considered here, is to take measurements of an actual device. These defaults model integrated circuit diodes. First select a value for spice parameter N between 1 and 2. It is required for the diode equation n.

The first four in the table are not relevant because they are schottky, schottky, germanium, and silicon small signal, respectively. RS defaults to 0 for now. It will be estimated later. Though it would be reasonable to take TT for a similar rectifier like the 10A04 at 4. The 1N TT is not a valid choice because it is a fast recovery rectifier. The capacitance at the nearest to zero voltage on the graph is 30 pF at 1 V.

If simulating high speed transient response, as in switching regulator power supplies, TT and CJO parameters must be provided. The junction grading coefficient M is related to the doping profile of the junction. This is not a data sheet item. The default is 0. The power rectifiers in Table above use lower values for M than 0. We take the default values for VJ and EG. However the 10A04 rectifier uses the default, which we use for our 1N model Da1N in Table above. Table above lists values for schottky and germanium diodes.

See Table above for XTI for schottky diodes. BV is only necessary if the simulation exceeds the reverse breakdown voltage of the diode, as is the case for zener diodes.

IBV, reverse breakdown current, is frequently omitted, but may be entered if provided with BV. Figure below shows a circuit to compare the manufacturers model, the model derived from the datasheet, and the default model using default parameters. The three dummy 0 V sources are necessary for diode current measurement.

The 1 V source is swept from 0 to 1. DC statement in the netlist in Table below. We compare the three models in Figure below. Agreement is almost perfect at 1 A because the IS calculation is based on diode voltage at 1 A.

Our model grossly over states current above 1 A. First trial of manufacturer model, calculated datasheet model, and default model. Comparison of manufacturer model, calculated datasheet model, and default model to 1N datasheet graph of V vs I.

Increasing RS to This has the effect of more closely matching our datasheet model to the datasheet graph Figure above. Table below shows that the current 1. However, the current at 0. Second trial to improve calculated datasheet model compared with manufacturer model and default model.

This may increase the current Zener diode: There are two approaches to modeling a zener diode: set the BV parameter to the zener voltage in the model statement, or model the zener with a subcircuit containing a diode clamper set to the zener voltage. An example of the first approach sets the breakdown voltage BV to 15 for the 1n 15 V zener diode model IBV optional :.

The second approach models the zener with a subcircuit. Diode DR accounts for the forward conduction of the zener in the subcircuit. In Partnership with TE Connectivity. Don't have an AAC account? Create one now. Forgot your password? Click here. Latest Projects Education. Home Textbook Vol. General form: d[name] [anode] [cathode] [modelname]. Example: d1 1 2 mod1.

Comparing Diode Models from Different Sources Figure below shows a circuit to compare the manufacturers model, the model derived from the datasheet, and the default model using default parameters. DC V4 0 mV 0. If parameters are not provided, the model takes on default values.

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