Advanced Power. Electronics Corp. The TO package is universally preferred for all commercial-. The through-hole version. AP60N03P is available for low-profile applications.
|Published (Last):||12 August 2009|
|PDF File Size:||20.56 Mb|
|ePub File Size:||1.82 Mb|
|Price:||Free* [*Free Regsitration Required]|
The TO package is universally preferred for all. Front View. Pin Name. PN Package. D: TO Blank : Tube or Bulk. This datasheet contains new product information. Anachip Corp. No liability is assumed as a result of the use of. No rights under any patent accompany the sale of the product. Drain-Source Voltage. Gate-Source Voltage. T STG. Pulsed Drain Current Note 1. Total Power Dissipation. Linear Derating Factor. Storage Temperature Range. Operating Junction Temperature Range. Thermal Resistance Junction-Case.
Thermal Resistance Junction- Ambient. Test Conditions. BV DSS. R DS ON. V GS th. I DSS. I GSS. C iss. C oss. C rss. Static Drain-Source. On-Resistance Note 2. Gate Threshold Voltage. Drain-Source Leakage Current. Gate Source Leakage. Total Gate Charge Note 2. Gate-Source Charge. Turn-On Delay Time Note 2.
Rise Time. Turn-Off Delay Time. Input Capacitance. Output Capacitance. Reverse Transfer Capacitance. Q rr Reverse Recovery Charge. Note 1: Pulse width limited by safe operating area. Download 60N03 Datasheet. No liability is assumed as a result of the use of this product. Maximum 3. Unit - - 1.
60N03 MOSFET. Datasheet pdf. Equivalent
The TO package is universally preferred for all. Front View. Pin Name. PN Package.
60N03S Datasheet PDF