Freescale Semiconductor. Technical Data. Designed primarily for wideband large - signal output and driver applications. Devices are unmatched and are suitable for. Power Gain —
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Freescale Semiconductor. Technical Data. Designed for broadband commercial and industrial applications with fre-. The high gain and broadband performance of this. Typical Single - Carrier N. Power Gain — Designed for Enhanced Ruggedness.
EVM — 1. GSM Application. Typical GSM Performance:. Full Frequency Band -. P out. Power Gain — 20 dB. Table 1. Maximum Ratings. Drain - Source Voltage. Gate - Source Voltage. Maximum Operation Voltage. Storage Temperature Range. Case Operating Temperature. Operating Junction Temperature 1,2.
V DSS. T stg. Table 2. Thermal Characteristics. Value 2,3. Thermal Resistance, Junction to Case. Continuous use at maximum temperature will affect MTTF. All rights reserved. RF Device Data. Table 3. ESD Protection Characteristics.
Test Methodology. A Minimum. IV Minimum. Table 4. Moisture Sensitivity Level. Package Peak Temperature. Table 5. Max Unit. Off Characteristics. Gate - Source Leakage Current. I DSS. I GSS. On Characteristics. Gate Threshold Voltage. Gate Quiescent Voltage.
Drain - Source On - Voltage. V GS th. V DS on. Dynamic Characteristics. Reverse Transfer Capacitance. Output Capacitance. Input Capacitance. C oss. N - CDMA, 1. Power Gain. G ps 21 Drain Efficiency. Adjacent Channel Power Ratio. Input Return Loss. Freescale Semiconductor Technical Data www. The high gain and broadband performance of this device makes it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
ESD Protection Characteristics www.
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