IRF7341 DATASHEET PDF

PD Top View. The SO-8 has been modified through a customized. With these improvements, multiple. The package is designed for.

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This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0. PD Top View. The SO-8 has been modified through a customized. With these improvements, multiple. The package is designed for. Absolute Maximum Ratings. V GSM. Drain- Source Voltage. Power Dissipation. Linear Derating Factor. Gate-to-Source Voltage.

Junction and Storage Temperature Range. Thermal Resistance. Maximum Junction-to-Ambient. No Preview Available! R DS on. V GS th. Gate Threshold Voltage. I DSS. I GSS. Forward Transconductance. Gate-to-Source Forward Leakage. Gate-to-Source Reverse Leakage. Total Gate Charge. Q gs Gate-to-Source Charge.

Q gd Gate-to-Drain "Miller" Charge. Turn-On Delay Time. Rise Time. Turn-Off Delay Time. Fall Time. C iss Input Capacitance. C oss Output Capacitance. C rss Reverse Transfer Capacitance. Source-Drain Ratings and Characteristics. I S Continuous Source Current. Body Diode. Q rr Reverse RecoveryCharge. A integral reverse. See fig. See Figure 8. International Rectifier Electronic Components Datasheet. Part Number. View PDF for Mobile. International Rectifier. Site map.

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